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另外，soi还具有了较高的跨导、降低的寄生电容、减弱的 短沟效应 、较为陡直的亚阈斜率，与体硅电路相比，soi电路的抗 辐照强度 提高了100倍。 在高温环境下，soi器件性能明显优于体. 首先 fd soi 的沟道不需要掺杂，因为未掺杂的足够薄的 silicon 才能做到全耗尽。当然你的观点本身就有问题，电子是source和drain和bulk跑到沟道形成耗尽层的，不只是从衬底来的。 其.
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